IXFT15N100Q Datasheet - IXYS Corporation

IXFT15N100Q HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V ID25 = 15 A RDS(on) = 0.7 Ω trr ≤ 250 ns Preliminary data sheet TO-247 AD (IXFH) Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL M d Weight Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width.

IXFT15N100Q Features

* z IXYS advanced low Qg process z International standard packages z Epoxy meet UL 94 V-0, flammability classification z Low RDS (on) low Qg z Avalanche energy and current rated z Fast intrinsic rectifier Advantages z Easy to mount z Space savings z High power density © 2001 IXYS All rights reserved

IXFT15N100Q Datasheet (190.84 KB)