* International standard package
* Low R HDMOSTM process DS (on)
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier Applications
IXFT10N100 Datasheet (73.47 KB)
IXFT10N100
IXYS
73.47 KB
Power mosfets.
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFT10N100 IXFT12N100 IXFT13N100
V DSS
I
D25
1000 V 10 A
.
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