IXFT140N10P Datasheet - IXYS Corporation

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IXFT140N10P N-Channel Power MOSFET

PolarHVTM HiPerFET IXFH 140N10P Power MOSFETs IXFT 140N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated V DSS ID25 RDS(on) trr .

IXFT140N10P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFT140N10P

Manufacturer:

IXYS Corporation

File Size:

225.16 KB

Description:

N-Channel Power MOSFET

Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (T J = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4.0 mA I GSS V GS = ±20 V, DC

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IXFT140N10P N-Channel Power MOSFET IXYS Corporation

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