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IXFT140N10P N-Channel Power MOSFET

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Description

PolarHVTM HiPerFET IXFH 140N10P Power MOSFETs IXFT 140N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated V DSS ID25 RDS(on) trr .

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Datasheet Specifications

Part number
IXFT140N10P
Manufacturer
IXYS Corporation
File Size
225.16 KB
Datasheet
IXFT140N10P_IXYSCorporation.pdf
Description
N-Channel Power MOSFET

Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (T J = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4.0 mA I GSS V GS = ±20 V, DC

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