* G = Gate S = Source S D = Drain TAB = Drain (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 300 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, I
IXFT15N80Q Datasheet (111.91 KB)
IXFT15N80Q
IXYS Corporation
111.91 KB
Hiperfet power mosfets.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 15N80Q IXFT 15N80Q VDSS ID25 RDS(on) = = = 80.
📁 Related Datasheet
IXFT15N100 HiPerFET Power MOSFETs (IXYS)
IXFT15N100Q HiPerFET Power MOSFETs (IXYS Corporation)
IXFT15N100Q3 Power MOSFET (IXYS Corporation)
IXFT150N17T2 Power MOSFET (IXYS Corporation)
IXFT150N20T Power MOSFET (IXYS)
IXFT100N30X3HV N-Channel Power MOSFET (IXYS)
IXFT10N100 Power MOSFETs (IXYS)
IXFT120N15P Polar MOSFETs (IXYS Corporation)
IXFT12N100 Power MOSFETs (IXYS)
IXFT12N100F Power MOSFET (IXYS Corporation)
