* International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low rated package inductance - easy to drive and to protect Fast intrinsic Rectifier 1.6 mm (0.062 in.) from case for 10 s Mount
IXFT68N20 Datasheet (188.96 KB)
IXFT68N20
IXYS Corporation
188.96 KB
Power mosfet.
www.DataSheet.co.kr
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on)
IXFH/IXFT 68N20 IXF.
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