* High Voltage Package
* Low RDS(ON) and QG
* Avalanche Rated
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount
* Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4m
IXFT60N65X2HV Datasheet (192.64 KB)
IXFT60N65X2HV
IXYS
192.64 KB
Power mosfet.
X2-Class HiPerFETTM Power MOSFET
IXFT60N65X2HV
VDSS = ID25 = RDS(on)
650V 60A 52m
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diod.
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