IXGA16N60C2 Datasheet - IXYS Corporation

IXGA16N60C2 High-Speed IGBT

www.DataSheet4U.com Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 40 A = 3.0 V = 35 ns D1 Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C (IXG_16N60C2D1 diode) TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 22 Ω Clamped ind.

IXGA16N60C2 Features

* z z C E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Mounting torque (M3.5 screw) 0.55/5 Nm/lb.in. 300 260 4 2 °C °C g g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature soldering SMD devices for 10s Weight TO-220 TO-263 z V

IXGA16N60C2_IXYSCorporation.pdf