IXUC120N10 - Trench Power MOSFET ISOPLUS220

IXYS Corporation

Datasheet Details

l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(.

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Published: Sep 15, 2005 |