IXUC120N10 Datasheet - IXYS Corporation

IXUC120N10, Trench Power MOSFET ISOPLUS220

ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 120N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 120 A RDS(on) = 9..

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IXUC120N10_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXUC120N10

Manufacturer:

IXYS Corporation

File Size:

56.70 KB

Description:

Trench Power MOSFET ISOPLUS220

Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(

Applications

* Automotive 42V systems - electronic switches to replace relays and fuses - choppers to replace series dropping resistors used for motors, heaters, etc. - inverters for AC drives, e. g. starter generator - DC-DC converters, e. g. 12V to 42V, etc. l Power supplies - DC - DC converters - Solar inverters

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