Datasheet4U Logo Datasheet4U.com

IXUC120N10 Trench Power MOSFET ISOPLUS220

📥 Download Datasheet  Datasheet Preview Page 1

Description

ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 120N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 120 A RDS(on) = 9..

📥 Download Datasheet

Preview of IXUC120N10 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
IXUC120N10
Manufacturer
IXYS Corporation
File Size
56.70 KB
Datasheet
IXUC120N10_IXYSCorporation.pdf
Description
Trench Power MOSFET ISOPLUS220

Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(

Applications

* Automotive 42V systems - electronic switches to replace relays and fuses - choppers to replace series dropping resistors used for motors, heaters, etc. - inverters for AC drives, e. g. starter generator - DC-DC converters, e. g. 12V to 42V, etc. l Power supplies - DC - DC converters - Solar inverters

IXUC120N10 Distributors

📁 Related Datasheet

📌 All Tags

IXYS Corporation IXUC120N10-like datasheet