IXUC160N075 Datasheet, Mosfet, IXYS Corporation

PDF File Details

Part number:

IXUC160N075

Manufacturer:

IXYS Corporation

File Size:

506.20kb

Download:

📄 Datasheet

Description:

Trench power mosfet.

TAGS

IXUC160N075

IXYS Corporation

📁 Related Datasheet

IXUC160N075 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 6.5mΩ@VGS=10V ·100% a.

IXUC100N055 - 55V Trench Power MOSFET (IXYS Corporation)
.DataSheet.co.kr ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC100N055 VDSS = 55 V ID2.

IXUC120N10 - Trench Power MOSFET ISOPLUS220 (IXYS Corporation)
ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 120N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 120 A RDS(on) = 9..

IXUC200N055 - Trench Power MOSFET ISOPLUS220 (IXYS Corporation)
ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC200N055 VDSS = 55 V ID25 = 200 A RDS(on) = 5.

IXUC60N10 - Power MOSFET (IXYS)
ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A RDS(on) = 16.4.

IX0640CE - IX0640CE (ETC)
.

IX150T06M-AG - XPT IGBT (IXYS)
Trench XPT IGBT Chip IX150T06M-AG tentative Type VCE [V] IX150T06M-AG 650 IC Chip Size Package [A] [mm] x [mm] 300 14.2 10.6 sawn on foil.

IX1779CE - IX1779CE Circuit (ETC)
.

IX2113 - 600V High and Low Side Gate Driver (IXYS)
INTEGRATED CIRCUITS DIVISION IX2113 600V High and Low Side Gate Driver Driver Characteristics Parameter Rating VOFFSET IO +/- (Source/Sink) VOUT .

IX2120 - 1200V High and Low Side Gate Driver (IXYS)
INTEGRATED CIRCUITS DIVISION Driver Characteristics Parameter VOFFSET IO +/- (Source/Sink) VOUT ton/toff Rating 1200 2/2 15-20 250/210 Units V A V.