* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Trench MOSFET - very fast lsowwitcRhDiSn(ogn) - usable intrinsic reverse diode z Low drain to tab capacitance(
IXUC160N075 Datasheet (506.20 KB)
IXUC160N075
IXYS Corporation
506.20 KB
Trench power mosfet.
ADVANCED TECHNICAL INFORMATION
Trench Power MOSFET IXUC160N075 ISOPLUS220TM
Electrically Isolated Back Surface
VDSS = ID25 = RDS(on) =
75 V 160 A 6.
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isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 75V(Min) ·Static drain-source on-resistance:
RDS(on) ≤ 6.5mΩ@VGS=10V ·100% a.
IXUC100N055 - 55V Trench Power MOSFET
(IXYS Corporation)
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ADVANCED TECHNICAL INFORMATION
Trench Power MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
IXUC100N055
VDSS = 55 V ID2.
IXUC120N10 - Trench Power MOSFET ISOPLUS220
(IXYS Corporation)
ADVANCE TECHNICAL INFORMATION
Trench Power MOSFET IXUC 120N10
ISOPLUS220TM
Electrically Isolated Back Surface
VDSS = 100 V ID25 = 120 A RDS(on) = 9..
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ADVANCED TECHNICAL INFORMATION
Trench Power MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
IXUC200N055
VDSS = 55 V ID25 = 200 A RDS(on) = 5.
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ADVANCE TECHNICAL INFORMATION
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Electrically Isolated Back Surface
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IX150T06M-AG - XPT IGBT
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Trench XPT IGBT Chip
IX150T06M-AG
tentative
Type
VCE
[V]
IX150T06M-AG
650
IC
Chip Size
Package
[A]
[mm] x [mm]
300
14.2 10.6 sawn on foil.
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