Datasheet4U Logo Datasheet4U.com

IXUC200N055 Datasheet - IXYS Corporation

IXUC200N055 - Trench Power MOSFET ISOPLUS220

ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC200N055 VDSS = 55 V ID25 = 200 A RDS(on) = 5.1 mΩ ISOPLUS 220TM Symbol VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 Package lead current limit TC = 25°C TC = 25°C Maximum Ratings 55 ±20 200 160 200 140 45 500 300 -55 +175 175 -55 +150

IXUC200N055 Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(

IXUC200N055_IXYSCorporation.pdf

Preview of IXUC200N055 PDF
IXUC200N055 Datasheet Preview Page 2

Datasheet Details

Part number:

IXUC200N055

Manufacturer:

IXYS Corporation

File Size:

53.94 KB

Description:

Trench power mosfet isoplus220.

📁 Related Datasheet

IXUC100N055 IXUC120N10 IXUC160N075 IXUC60N10

📌 All Tags

IXUC200N055 Trench Power MOSFET ISOPLUS220 IXYS Corporation