IXUC60N10 Datasheet - IXYS

IXUC60N10 Power MOSFET

ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A RDS(on) = 16.4 mΩ ISOPLUS 220TM Symbol Test Conditions VDSS VGS ID25 I D90 IS25 IS90 ID(RMS) EAS PD T J T JM T stg TL V ISOL FC Weight T J = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 Package lead current limit T C = 25°C TC = 25°C 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/6.

IXUC60N10-IXYS.pdf