60N20F - IXFH60N20F

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IXYS

Part number	60N20F
Manufacturer	IXYS
File Size	114.22 KB
Description	IXFH60N20F
Datasheet	60N20F Datasheet
Additional preview pages of the 60N20F datasheet.

z z z z TAB TO-268 G S TAB G = Gate S = Source D = Drain TAB = Drain z z International standard packages Avalanche Rated RF capable MOSFETs Double metal process for low gate resistnace Low package inductance Fast intrinsic diode Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 200 3.0 5.0 ± 100 V V n.

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Published: Mar 25, 2014 |