60N20F IXFH60N20F

IXYS

Description

Advance Technical Information HiPerRFTM Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IX.

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Datasheet Specifications

Part number: 60N20F
Manufacturer: IXYS
File Size: 114.22 KB
Datasheet: 60N20F-IXYS.pdf
Description: IXFH60N20F

Features

* z z z z TAB TO-268 G S TAB G = Gate S = Source D = Drain TAB = Drain z z International standard packages Avalanche Rated RF capable MOSFETs Double metal process for low gate resistnace Low package inductance Fast intrinsic diode Advantages z Symbol Test Conditions (TJ = 25°C, unless otherw

Applications

* z 50 μA 1.5 mA 38 mΩ z z z z VGS = 10V, ID = 0.5
* ID25, Note 1 Switched-mode and resonant-mode power supplies, >500kHz switching DC-DC Converters Laser Drivers 13.5 Mhz industrial applications Pulse generation © 2008 IXYS CORPORATION, All rights reserved DS98885A(11/08) Free Datashe

60N20F Distributors

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60N20F IXFH60N20F IXYS

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