60N20F Datasheet - IXYS

60N20F IXFH60N20F

Advance Technical Information HiPerRFTM Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH60N20F IXFT60N20F VDSS ID25 RDS(on) trr = = ≤ ≤ 200V 60A 38mΩ 200ns TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient .

60N20F Features

* z z z z TAB TO-268 G S TAB G = Gate S = Source D = Drain TAB = Drain z z International standard packages Avalanche Rated RF capable MOSFETs Double metal process for low gate resistnace Low package inductance Fast intrinsic diode Advantages z Symbol Test Conditions (TJ = 25°C, unless otherw

60N20F Datasheet (114.22 KB)

60N20F Datasheet Preview — Preview of 60N20F PDF

Datasheet Details

Part number:

60N20F

Manufacturer:

IXYS

File Size:

114.22 KB

Description:

Ixfh60n20f.

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60N20F IXFH60N20F IXYS

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