60N60 - IGBT
(IXYS Corporation)
Ultra-Low VCE(sat) IGBT
IXGN 60N60
VCES = 600 V
IC25 = 100 A VCE(sat) = 1.7 V
Preliminary data sheet
Symbol
Test Conditions
VCES V
CGR
VGES VGEM.
60N60D1 - 600V FIELD-STOP IGBT
(Silan Microelectronics)
Silan
Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet
60A, 600V FIELD STOP IGBT
DESCRIPTION
SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog.
60N60FD1 - 600V FIELD-STOP IGBT
(Silan Microelectronics)
Silan
Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet
60A, 600V FIELD STOP IGBT
DESCRIPTION
SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog.
60N03 - Power MOSFET
(Tuofeng Semiconductor)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
60N03
Power MOSFET
60 Amps,30Volts
N-Channel DPAK
Designed for low voltage, high speed switching a.
60N03 - N-Channel MOSFET
(Anachip)
N-Channel Enhancement Mode Power MOSFET
AF60N03
Features
- Simple Drive Requirement - Low Gate Charge - Fast Switching - RoHS Compliant - Pb Free .
60N03 - N-Channel MOSFET
(Cmos)
CMD60N03/CMU60N03
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The 60N03 is N-channel MOSFET device that features a low on-.