60N60 Datasheet - IXYS Corporation

60N60 IGBT

Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet Symbol Test Conditions VCES V CGR VGES VGEM I C25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MW Continuous Transient T C = 25°C TC = 90°C T C = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH PC TC = 25°C TJ T JM Tstg M Mounting torque d Terminal connection torque (M4) Weight Maximum lead temperature for .

60N60 Features

* q International standard package SOT-227B q Aluminium nitride isolation - high power dissipation q Isolation voltage 3000 V~ q Very high current, fast switching IGBT q Low V for minimum on-state CE(sat) conduction losses q MOS Gate turn-on drive simplicity q Low collector-to-case capacitance (< 50 p

60N60 Datasheet (65.83 KB)