IXA30PG1200DHGLB Datasheet - IXYS

IXA30PG1200DHGLB XPT IGBT

Advanced Technical Information IXA 30PG1200DHGLB XPT IGBT phaseleg ISOPLUS™ Surface Mount Power Device IC25 = 43 A VCES = 1200 V V = CE(sat) typ 1.9 V 7 D3 6 D1 4 S1 5 D4 9 1 D2 3 S2 2 8 IGBTs S1, S2 Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Conditions TVJ = 25°C to 150°C TC = 25°C TC = 80°C VGE = 15 V; RG = 39 W; TVJ = 125°C RBSOA, clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 39 W; TVJ = 125°C none repetitive TC = 25°C Maximum Ratings 1200.

IXA30PG1200DHGLB Features

* XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits

* Sonic™ diode - fast reverse recovery - low operating forward voltage - low leakage current

* VCEs

IXA30PG1200DHGLB-IXYS.pdf