* / Advantages:
* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
* Thin wafer technology combined wi
IXA33IF1200HB Datasheet (147.12 KB)
IXA33IF1200HB
IXYS
147.12 KB
Xpt igbt.
IXA33IF1200HB XPT IGBT VCES I C25 = = 1200 V 58 A 1.8 V VCE(sat) = Copack Part number IXA33IF1200HB Backside: collector 2 (C) (G) 1 3 (E) .
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