* °C G = Gate, E = Emitter, C E C (TAB) C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g
* Inter
IXGH20N100 Datasheet (110.86 KB)
IXGH20N100
IXYS
110.86 KB
Igbt.
IGBT
IXGH 20N100 IXGT 20N100
VCES IC25 VCE(sat) tfi(typ)
= 1000 V = 40 A = 3.0 V = 280 ns
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 IC.
📁 Related Datasheet
IXGH20N120 - IGBT
(IXYS Corporation)
..
IGBT
Preliminary Data Sheet
IXGH 20N120 VCES IXGT 20N120 IC25 VCE(sat) tfi(typ)
= 1200 V = 40 A = 2.5 V = 380 ns
Symbol VCES V.
IXGH20N120A3 - GenX3 1200V IGBTs
(IXYS Corporation)
GenX3TM 1200V IGBTs
Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching
IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
VCES =
IC110 = VCE(sat) ≤
1200V 20A 2..
IXGH20N120B - High Voltage IGBT
(IXYS)
High Voltage IGBT
Preliminary Data Sheet
IXGH 20N120B VCES IXGT 20N120B IC25 VCE(sat)
tfi(typ)
= 1200 = 40 = 3.4 = 160
V A V ns
Symbol VCES VCGR V.
IXGH20N140C3H1 - GenX3 1400V IGBTs
(IXYS)
Advance Technical Information
GenX3TM 1400V IGBTs w/ Diode
High-Speed PT IGBTs for 20 - 50 kHz Switching
IXGH20N140C3H1 IXGT20N140C3H1
VCES = IC100.
IXGH20N30 - HiPerFAST IGBT
(IXYS Corporation)
..
HiPerFASTTM IGBT
IXGH20N30
VCES IC25 VCE(sat)typ tfi(typ)
= 300 V = 40 A = 1.45 V = 180 ns
Preliminary data
Symbol VCES VCGR.
IXGH20N60 - IGBT
(IXYS Corporation)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
IXGH20N60A - IGBT
(IXYS Corporation)
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions.
IXGH20N60B - IGBT
(IXYS Corporation)
..
HiPerFASTTM IGBT
IXGH 20N60B IXGT 20N60B
VCES IC25 VCE(sat)typ tfi(typ)
= 600 V = 40 A = 1.7 V = 100 ns
Preliminary data shee.
