IXGH25N120 - High speed IGBT
Low V CE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A VCES 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH PC TJ TJM Tstg Md Weight TC = 25°C Mounting torque (M3) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Max
IXGH25N120 Features
* l International standard package JEDEC TO-247 AD l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l MOS Gate turn-on - drive simplicity Symbol BVCES V GE(th) I CES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
