IXGH25N100 Datasheet - IXYS Corporation

IXGH25N100 High speed IGBT

VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125° C, RG = 33 Ω Clamped inductive load, L = 100 µH T C = 25°C Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 +150 150 -55 +150 V V V V A A A A W °C °C °C TO-247 AD (IXGH) .

IXGH25N100 Features

* International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA,

IXGH25N100_IXYSCorporation.pdf