* International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA,
IXGH25N100 Datasheet (112.50 KB)
IXGH25N100
IXYS Corporation
112.50 KB
High speed igbt.
VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V
I C25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
Symbol
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IXGH25N100A - High speed IGBT
(IXYS Corporation)
VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V
I C25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
Symbol
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IXGH25N100AU1 - High speed IGBT with Diode
(IXYS Corporation)
Preliminary data
Low VCE(sat) High speed IGBT with Diode
VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V
IC25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
TO-247.
IXGH25N100U1 - High speed IGBT with Diode
(IXYS Corporation)
Preliminary data
Low VCE(sat) High speed IGBT with Diode
VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V
IC25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
TO-247.
IXGH25N120 - High speed IGBT
(IXYS)
Low V CE(sat)
High speed IGBT
IXGH 25 N120 IXGH 25 N120A
VCES 1200 V 1200 V
IC25 50 A 50 A
VCE(sat) 3V 4V
Symbol
Test Conditions
VCES VCGR
VGES.
IXGH25N120A - High speed IGBT
(IXYS)
Low V CE(sat)
High speed IGBT
IXGH 25 N120 IXGH 25 N120A
VCES 1200 V 1200 V
IC25 50 A 50 A
VCE(sat) 3V 4V
Symbol
Test Conditions
VCES VCGR
VGES.
IXGH25N160 - High Voltage IGBT
(IXYS)
High Voltage IGBT
For Capacitor Discharge Applications
Preliminary Data Sheet
IXGH 25N160 IXGT 25N160
VCES = 1600 V IC25 = 75 A VCE(sat) = 2.5 V
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IXGH25N250 - High Voltage IGBT
(IXYS)
Preliminary Technical Information
High Voltage IGBT
For Capacitor Discharge Applications
IXGH25N250 IXGT25N250 IXGV25N250S
VCES = 2500 V
IC25 = 60.
IXGH20N100 - IGBT
(IXYS)
IGBT
IXGH 20N100 IXGT 20N100
VCES IC25 VCE(sat) tfi(typ)
= 1000 V = 40 A = 3.0 V = 280 ns
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 IC.
