IXGH25N120A, IXGH25N120 Datasheet - IXYS

IXGH25N120A High speed IGBT

Low V CE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A VCES 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH PC TJ TJM Tstg Md Weight TC = 25°C Mounting torque (M3) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Max.

IXGH25N120A Features

* l International standard package JEDEC TO-247 AD l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l MOS Gate turn-on - drive simplicity Symbol BVCES V GE(th) I CES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.

IXGH25N120-IXYS.pdf

IXGH25N120A Datasheet Preview — This datasheet PDF includes multiple part numbers: IXGH25N120A, IXGH25N120. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXGH25N120A, IXGH25N120

Manufacturer:

IXYS

File Size:

45.89 KB

Description:

High speed igbt.

Note:

This datasheet PDF includes multiple part numbers: IXGH25N120A, IXGH25N120.
Please refer to the document for exact specifications by model.

IXGH25N120A Distributor

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TAGS

IXGH25N120A IXGH25N120 High speed IGBT IXYS