IXGH25N100AU1 Datasheet (IXYS Corporation) - High speed IGBT with Diode

IXGH25N100AU1, High speed IGBT with Diode

Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A VCE(sat) 3.5 V 4.0 V TO-247 AD (IXGH) Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25 °C Maximum Ratings 1000 1000 ±20 ±30 50 25 100

IXGH25N100AU1 Features

* International standard package JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM l l G C E