IXGH25N100AU1 High speed IGBT with Diode

IXYS Corporation

Description

Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A VCE(sat) 3.5 V 4.0 V TO-247.

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Datasheet Specifications

Part number: IXGH25N100AU1
Manufacturer: IXYS Corporation
File Size: 315.17 KB
Datasheet: IXGH25N100AU1_IXYSCorporation.pdf
Description: High speed IGBT with Diode

Features

* International standard package JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM l l G C E

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C 5.5 500 8 ±100 25N100U1 25N100AU1 3.5 4.0 V V µA mA nA l l l l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 4.5 mA, VGE = 0 V = 500 µA, VCE = VGE AC motor speed cont

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IXGH25N100AU1 High speed IGBT with Diode IXYS Corporation

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