IXGH25N250 Datasheet - IXYS

IXGH25N250 High Voltage IGBT

Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGH25N250 IXGT25N250 IXGV25N250S VCES = 2500 V IC25 = 60 A V CE(sat) ≤ 2.9 V TO-247 (IXGH) Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg T L TSOLD Md Weight Symbol BVCES VGE(th) I CES IGES VCE(sat) Test Conditions T = 25°C to 150°C J TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20 V, 1 ms VGE= 20 V, TJ = 125°C, RG = 20 Ω Clamped.

IXGH25N250 Features

* Test Conditions IC = 250 μA, VGE = 0 V IC = 250 μA, VCE = VGE V = 0.8

* V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 25 A, VGE = 15 V IC = 75 A TO-247 TO-268 6 g 4 g Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 2500 V 3.0 5.0 V TJ = 125°C

IXGH25N250 Datasheet (220.56 KB)