IXGH25N100U1 Datasheet, Diode, IXYS Corporation

IXGH25N100U1 Features

• Diode International standard package JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l MO

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Part number:

IXGH25N100U1

Manufacturer:

IXYS Corporation

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315.17kb

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📄 Datasheet

Description:

High speed igbt with diode.

IXGH25N100U1 Application

• Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C 5.5 5

TAGS

IXGH25N100U1

IXYS Corporation

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