* International standard package JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM l l G C E
IXGH25N100U1 Datasheet (315.17 KB)
IXGH25N100U1
IXYS Corporation
315.17 KB
High speed igbt with diode.
Preliminary data
Low VCE(sat) High speed IGBT with Diode
VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V
IC25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
TO-247.
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I C25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
Symbol
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(IXYS Corporation)
Preliminary data
Low VCE(sat) High speed IGBT with Diode
VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V
IC25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
TO-247.
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Symbol
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High Voltage IGBT
For Capacitor Discharge Applications
Preliminary Data Sheet
IXGH 25N160 IXGT 25N160
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Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 IC.
