IXGH20N30 - HiPerFAST IGBT
www.DataSheet4U.com HiPerFASTTM IGBT IXGH20N30 VCES IC25 VCE(sat)typ tfi(typ) = 300 V = 40 A = 1.45 V = 180 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 300 300 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCES 200 V V V V A A A A W °C °C °C
IXGH20N30 Features
* International standard package JEDEC TO-247 AD
* High current handling capability
* Newest generation HDMOSTM process
* MOS Gate turn-on - drive simplicity Applications
* DataSh ee Maximum Lead temperature for solde
