IXGH20N30 Datasheet - IXYS Corporation

IXGH20N30 HiPerFAST IGBT

www.DataSheet4U.com HiPerFASTTM IGBT IXGH20N30 VCES IC25 VCE(sat)typ tfi(typ) = 300 V = 40 A = 1.45 V = 180 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 300 300 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCES 200 V V V V A A A A W °C °C °C .

IXGH20N30 Features

* International standard package JEDEC TO-247 AD

* High current handling capability

* Newest generation HDMOSTM process

* MOS Gate turn-on - drive simplicity Applications

* DataSh ee Maximum Lead temperature for solde

IXGH20N30_IXYSCorporation.pdf

IXGH20N30 Datasheet Preview — Preview of IXGH20N30 PDF

Datasheet Details

Part number:

IXGH20N30

Manufacturer:

IXYS Corporation

File Size:

95.52 KB

Description:

Hiperfast igbt.

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IXGH20N30 IXGH20N30 HiPerFAST IGBT IXYS Corporation

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