* z Optimized for Low Switching Losses z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Anti-Parallel Ultra Fast Diode z Square RBSOA Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Speci
IXGJ50N60C4D1 Datasheet (401.97 KB)
IXGJ50N60C4D1
IXYS
401.97 KB
High-gain igbt.
High-Gain IGBT w/ Diode (Electrically Isolated Tab) Preliminary Technical Information IXGJ50N60C4D1 VCES = IC110 = V ≤ CE(sat) 600V 21A 2.50V Hig.
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Microchip Technology Inc
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| 1N4989US |
| 0 In Stock |
| Qty : 500 units |
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Unit Price : $10.8
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