Datasheet Specifications
- Part number
- IXGJ50N60C4D1
- Manufacturer
- IXYS
- File Size
- 401.97 KB
- Datasheet
- IXGJ50N60C4D1-IXYS.pdf
- Description
- High-Gain IGBT
Description
High-Gain IGBT w/ Diode (Electrically Isolated Tab) Preliminary Technical Information IXGJ50N60C4D1 VCES = IC110 = V ≤ CE(sat) 600V 21A 2.50V Hig.
Features
* z Optimized for Low Switching Losses z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Anti-Parallel Ultra Fast Diode z Square RBSOA Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise SpeciApplications
* z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Lamp Ballasts © 2011 IXYS CORPORATION, All Rights Reserved DS100369A(10/11) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 36A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f =IXGJ50N60C4D1 Distributors
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