IXGK35N120BD1 Datasheet - IXYS

IXGK35N120BD1 IGBT

Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.3 V =tfi(typ) 160 ns (D1) Symbol Test Conditions V CES VCGR V GES VGEM IC25 I C90 ICM SSOA (RBSOA) T J = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C T C = 90°C TC = 25°C, 1 ms V GE = 15 V, T VJ = 125°C, R G = 5 Ω Clamped inductive load P C T C = 25°C TJ TJM Tstg Maximum Lead temperature for solderi.

IXGK35N120BD1 Features

* International standard packages JEDEC TO-264 and PLUS247TM

* Low switching losses, low V(sat)

* MOS Gate turn-on - drive simplicity Symbol Test Conditions BVCES VGE(th) I CES IGES VCE(sat) IC = 1 mA, VGE = 0 V IC = 750 µA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC =

IXGK35N120BD1 Datasheet (40.14 KB)