IXGY2N120 Datasheet (IXYS) - High Voltage IGBT

IXGY2N120, High Voltage IGBT

Preliminary Data Sheet High Voltage IGBT IXGY 2N120 VCES 1200 V IC90 2.0 A VCE(SAT) 3V Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ VGES VGEM IC25 IC90 ICM SSOA (RBSOA) Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 150Ω Clamped inductive load PC TJ TJM TSTG Weight TC = 25°C Max.

Lead Temperature for Soldering (1.6mm from case for 10s) Maximum Ratings 1200 V 1200 V ±20 V ±30 V 5 2 8 ICM = 6 @ 0.8 VCES

IXGY2N120 Features

* International standard package

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ