IXTA4N60P Datasheet, Mosfet, IXYS

IXTA4N60P Features

  • Mosfet
  • International Standard Packages
  • Low QG
  • Avalanche Rated
  • Low Package Inductance
  • Fast Intrinsic Rectifier Advantages
  • High Power

PDF File Details

Part number:

IXTA4N60P

Manufacturer:

IXYS

File Size:

838.33kb

Download:

📄 Datasheet

Description:

Polarhv power mosfet.

Datasheet Preview: IXTA4N60P 📥 Download PDF (838.33kb)
Page 2 of IXTA4N60P Page 3 of IXTA4N60P

IXTA4N60P Application

  • Applications
  • DC-DC Converters
  • Switch-Mode and Resonant-Mode Power Supplies
  • AC and DC Motor Drives
  •  Di

TAGS

IXTA4N60P
PolarHV
Power
MOSFET
IXYS

📁 Related Datasheet

IXTA4N60P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTA4N65X2 - Power MOSFET (IXYS)
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY4N65X2 IXTA4N65X2 IXTP4N65X2 VDSS = ID25 = RDS(on) 650V 4A.

IXTA4N65X2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 850mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.

IXTA4N70X2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 700V ·Static Drain-Source On-Resistance : RDS(on) ≤ 850mΩ@VGS= 10V ·Fast Sw.

IXTA4N70X2 - Power MOSFET (IXYS)
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU4N70X2 IXTY4N70X2 IXTA4N70X2 IXTP4N70X2 VDSS = ID25 =  RDS(.

IXTA4N80P - Power MOSFET (IXYS)
Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N80P IXTP4N80P VDSS = 800 = 3.6 ID25 RDS(on) ≤.

IXTA4N80P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.4Ω@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTA42N15T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTA42N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche volta.

IXTA42N15T - Power MOSFET (IXYS)
TrenchHVTM Power MOSFET IXTA42N15T IXTP42N15T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150V 42A 45mΩ TO-263 Symbol VDS.

IXTA42N25P - Power MOSFET (IXYS Corporation)
PolarHTTM Power MOSFET IXTA 42N25P IXTP 42N25P IXTQ 42N25P VDSS = ID25 = ≤ RDS(on) 250 42 84 V A mΩ N-Channel Enhancement Mode Avalanche Rated T.

Stock and price

part
IXYS Corporation
MOSFET N-CH 600V 4A TO263
DigiKey
IXTA4N60P
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts