IXTA4N60P
IXYS
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Polarhv power mosfet.
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IXTA4N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA4N65X2 - Power MOSFET
(IXYS)
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTY4N65X2 IXTA4N65X2 IXTP4N65X2
VDSS = ID25 = RDS(on)
650V 4A.
IXTA4N65X2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 850mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA4N70X2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS ≥ 700V ·Static Drain-Source On-Resistance
: RDS(on) ≤ 850mΩ@VGS= 10V ·Fast Sw.
IXTA4N70X2 - Power MOSFET
(IXYS)
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTU4N70X2 IXTY4N70X2 IXTA4N70X2 IXTP4N70X2
VDSS =
ID25 = RDS(.
IXTA4N80P - Power MOSFET
(IXYS)
Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA4N80P IXTP4N80P
VDSS = 800 = 3.6 ID25 RDS(on) ≤.
IXTA4N80P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 3.4Ω@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA42N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA42N15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTA42N15T - Power MOSFET
(IXYS)
TrenchHVTM Power MOSFET
IXTA42N15T IXTP42N15T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
150V 42A 45mΩ
TO-263
Symbol
VDS.
IXTA42N25P - Power MOSFET
(IXYS Corporation)
PolarHTTM Power MOSFET
IXTA 42N25P IXTP 42N25P IXTQ 42N25P
VDSS =
ID25 = ≤ RDS(on)
250 42 84
V A mΩ
N-Channel Enhancement Mode Avalanche Rated
T.