IXTA4N70X2 Datasheet - INCHANGE

IXTA4N70X2, N-Channel MOSFET

isc N-Channel MOSFET Transistor *.

Features

* Drain Source Voltage- : VDSS ≥ 700V
* Static Drain-Source On-Resistance : RDS(on) ≤ 850mΩ@VGS= 10V
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Easy to Mount
* Space Savings
* High Power Density
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Plused 8 A PD Total

IXTA4N70X2-INCHANGE.pdf