INCHANGE manufacturer logo and representative part image Part number: IXTA4N60P Manufacturer: INCHANGE File Size: 251.46kb Download: 📄 Datasheet Description: N-channel mosfet.
IXTA4N60P - PolarHV Power MOSFET (IXYS) PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d.
IXTA4N65X2 - Power MOSFET (IXYS) Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY4N65X2 IXTA4N65X2 IXTP4N65X2 VDSS = ID25 = RDS(on) 650V 4A.
IXTA4N65X2 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 850mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA4N70X2 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 700V ·Static Drain-Source On-Resistance : RDS(on) ≤ 850mΩ@VGS= 10V ·Fast Sw.
IXTA4N70X2 - Power MOSFET (IXYS) Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU4N70X2 IXTY4N70X2 IXTA4N70X2 IXTP4N70X2 VDSS = ID25 = RDS(.
IXTA4N80P - Power MOSFET (IXYS) Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N80P IXTP4N80P VDSS = 800 = 3.6 ID25 RDS(on) ≤.
IXTA4N80P - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.4Ω@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA42N15T - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor IXTA42N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTA42N15T - Power MOSFET (IXYS) TrenchHVTM Power MOSFET IXTA42N15T IXTP42N15T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150V 42A 45mΩ TO-263 Symbol VDS.
IXTA42N25P - Power MOSFET (IXYS Corporation) PolarHTTM Power MOSFET IXTA 42N25P IXTP 42N25P IXTQ 42N25P VDSS = ID25 = ≤ RDS(on) 250 42 84 V A mΩ N-Channel Enhancement Mode Avalanche Rated T.
