IXTA4N65X2 - Power MOSFET
Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY4N65X2 IXTA4N65X2 IXTP4N65X2 VDSS = ID25 = RDS(on) 650V 4A 850m TO-252 (IXTY) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 650 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C .
IXTA4N65X2 Features
* International Standard Packages
* Low RDS(ON) and QG
* Avalanche Rated
* Low Package Inductance
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ =