Part number:
IXTA05N100
Manufacturer:
INCHANGE
File Size:
250.12 KB
Description:
N-channel mosfet.
* Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATION
* DC/DC Converter
* Switch-Mode and Resonant
IXTA05N100 Datasheet (250.12 KB)
IXTA05N100
INCHANGE
250.12 KB
N-channel mosfet.
📁 Related Datasheet
IXTA05N100 - Power MOSFET
(IXYS Corporation)
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA05N100HV IXTA05N100 IXTP05N100
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS d.
IXTA05N100HV - Power MOSFET
(IXYS)
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA05N100HV IXTA05N100 IXTP05N100
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS d.
IXTA02N250 - High Voltage Power MOSFET
(IXYS)
High Voltage Power MOSFETs
N-Channel Enhancement Mode Fast Intrinsic Diode
IXTA02N250 IXTH02N250 IXTV02N250S
VDSS = ID25 = ≤RDS(on)
2500V 200mA 450.
IXTA02N250HV - High Voltage Power MOSFET
(IXYS)
High Voltage Power MOSFET
Advance Technical Information
IXTA02N250HV
VDSS =
ID25 = ≤ RDS(on)
2500V 200mA 450Ω
N-Channel Enhancement Mode Fast Int.
IXTA02N450HV - High Voltage Power MOSFETs
(IXYS)
High Voltage Power MOSFETs
Advance Technical Information
IXTA02N450HV IXTT02N450HV
VDSS I
D25
RDS(on)
= 4500V = 200mA ≤ 750Ω
N-Channel Enhancemen.
IXTA06N120P - Power MOSFET
(IXYS)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA06N120P IXTP06N120P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dV/dt
PD
TJ TJM T.
IXTA08N100D2 - Power MOSFET
(IXYS)
Depletion Mode MOSFET
N-Channel
IXTY08N100D2 IXTA08N100D2 IXTP08N100D2
D
VDSX = ID(on) >
RDS(on)
1000V 800mA
21
TO-252 (IXTY)
G S
G S D (Tab).
IXTA08N100D2HV - High Voltage Depletion Mode Power MOSFET
(IXYS)
High Voltage Depletion Mode Power MOSFET
IXTA08N100D2HV
D
VDSX = ID(on) >
RDS(on)
1000V 800mA
21
N-Channel
G S
Symbol
VDSX VDGX
VGSX VGSM
PD
.