IXTP2N80P, IXTU2N80P Datasheet - IXYS

IXTP2N80P - Power MOSFET

PolarTM Power MOSFET IXTU2N80P IXTY2N80P IXTA2N80P VDSS = ID25 =  RDS(on) 800V 2A 6 N-Channel Enhancement Mode IXTP2N80P TO-251 (IXTU) Avalanche Rated G D Symbol E VDSS VDGR VGSS T VGSM ID25 IDM E IA EAS dv/dt L PD TJ TJM O Tstg TL TSOLD FC S Md B Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 800 V 800 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  1

IXTP2N80P Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings BVDSS VGS = 0V, ID = 250μA 800 V Applications VGS(th) IGSS IDSS RDS(on) VDS = VGS,

IXTU2N80P-IXYS.pdf