IXTX60N50L2 Datasheet - IXYS

IXTX60N50L2 - Power MOSFET

LinearL2TM Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTK60N50L2 IXTX60N50L2 VDSS ID25 RDS(on) = 500V = 60A < 100m TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C 60 150 60 3 960 -55+150 150 -55+150 A.

IXTX60N50L2 Features

* Designed for linear operation

* International standard packages

* Avalanche rated

* Guaranteed FBSOA at 75C Advantages

* Easy to mount

* Space savings

* High power density Applications

* Solid state circuit breakers

* Soft start controls

* Linear amplifiers

IXTX60N50L2_IXYS.pdf