IXXH40N65B4H1 Datasheet - IXYS

IXXH40N65B4H1 - Extreme Light Punch Through IGBT

XPTTM 650V IGBT GenX4TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXH40N65B4H1 Symbol VCES V CGR VGES VGEM IC25 IC110 IF110 I CM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM T stg TL Md Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C, R GE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C T = 25°C, 1ms C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC

IXXH40N65B4H1 Features

* Optimized for 5-30kHz Switching

* Square RBSOA

* Anti-Parallel Sonic Diode

* Avalanche Rated

* Short Circuit Capability

* International Standard Package Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Applications

* Power Inve

IXXH40N65B4H1-IXYS.pdf