* Optimized for 5-20kHz Switching
* Square RBSOA
* Anti-Parallel Diode
* Avalanche Rated
* Short Circuit Capability
* International Standard Package Advantages
* High Power Density
* Extremely Rugged
* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25
IXXH40N65C4D1 Datasheet (240.20 KB)
IXXH40N65C4D1
IXYS
240.20 KB
Extreme light punch through igbt.
Advance Technical Information
XPTTM 650V IGBT GenX4TM w/Diode
IXXH40N65C4D1
Extreme Light Punch Through IGBT for 5-20 kHz Switching
VCES = 650V
I.
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Extreme Light Punch Through IGBT for 5-30 kHz Switching
IXXH40N65B4
VCES = 650V IC110 = 4.
IXXH40N65B4D1 - Extreme Light Punch Through IGBT
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XPTTM 650V IGBT GenX4TM w/Diode
IXXH40N65B4D1
Extreme Light Punch Through IGBT for 5-30 kHz Switching
Symbol
VCES V
CGR
VGES VGEM IC25 IC110 IF110 .
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Extreme Light Punch Through IGBT for 5-30 kHz Switching
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VCES V
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VGES VGEM IC25 IC110 .
IXXH100N60B3 - IGBT
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IXXH100N60B3
Extreme Light Punch Through IGBT for 10-30 kHz Switching
VCES = IC110 =
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600V 100A
1.80.
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XPTTM 600V IGBT GenX3TM
Extreme Light Punch Through IGBT for 20-60kHz Switching
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VCES = IC110 =
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IXXH110N65B4 - 650V IGBT
(IXYS)
XPTTM 650V IGBT GenX4TM
IXXH110N65B4
Extreme Light Punch Through IGBT for 10-30kHz Switching
VCES = 650V
I
= 110A
C110
V 2.10V CE(sat)
tf.
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Extreme Light Punch Through IGBT for 20-60 kHz Switching
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IXXH140N65B4 - IGBT
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IXXH140N65B4
Extreme Light Punch Through IGBT for 10-30kHz Switching
VCES = 650V
IC110 = 140A
V.
