* / Advantages:
* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
* Thin wafer technology combined wi
MIXA20WB1200TMI Datasheet (265.87 KB)
MIXA20WB1200TMI
IXYS
265.87 KB
Xpt igbt.
XPT IGBT Module
MIXA20WB1200TMI
tentative
3~ Rectifier
Brake Chopper
3~ Inverter
VRRM = I DAV = I FSM =
1600 V VCES = 1200 V VCES = 1200 V 70 A.
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