MIXA20WB1200TML - IGBT

Datasheet Details

High level of integration - only one power semiconductor module required for the whole drive.
Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI.
Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
Temperature sense included.
SONIC™ diode - fast and soft reverse recovery - low operating for.

📁 MIXA20WB1200TML Similar Datasheet

MIX2002 - 2.5W Single-Channel Class AB Audio Power Amplifier (Mixinno)
MIX2015A - 6W Single-Channel Class-F Audio Power Amplifier (Mixinno)
MIX2018 - 4.8W single channel Class-F audio power amplifier (WELLKING TECHNOLOGIES)
MIX2018A - 5W Calss-F Amplifier (Mixinno)
MIX2018E - 5W Single Channel Class-F Audio Power Amplifier (Mixinno)
MIX2029 - 7W single channel class-F audio power amplifier (Mixinno)
MIX2037 - 3W Single Channel Class-D Audio Power Amplifier (Mixinno)
MIX2039 - 5W Single Channel Class-F Audio Power Amplifier (Mixinno)

Other Datasheets by IXYS

Published: Aug 22, 2016 |