* / Advantages:
* High level of integration - only one power semiconductor module required for the whole drive
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
* Thin wafer technology com
MIXA450PF1200TSF Datasheet (168.74 KB)
MIXA450PF1200TSF
IXYS
168.74 KB
Xpt igbt.
XPT IGBT Module
Phase leg + free wheeling Diodes + NTC
Part number
MIXA450PF1200TSF
MIXA450PF1200TSF
VCES = 2x 1200 V
I C25 =
650 A
V =CE(sat)
1.
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