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DE375-102N10A - RF Power MOSFET

DE375-102N10A Description

DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/d.

DE375-102N10A Features

* TJ = 25°C unless otherwise specified SG1 SG2 GATE = = = = 1000 V 10 A 1.2 Ω 940 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2

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Power MOSFET IXYS Corporation
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