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IXGK50N60A2D1 IGBT

IXGK50N60A2D1 Description

Advance Technical Data IGBT with Diode IXGK 50N60A2D1 IXGX 50N60A2D1 V I CES VC25 CE(sat) = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol .

IXGK50N60A2D1 Features

* Low on-state voltage IGBT and anti-parallel diode in one package
* High current handling capability

IXGK50N60A2D1 Applications

* Lighting controls
* Heating controls
* AC/DC relays Symbol Test Conditions VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, VGE = 15 V Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) Min.

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