ICE60N160B - N-Channel Enhancement Mode MOSFET

Icemos

ICE60N160B Description

Preliminary Data Sheet ICE60N160B ICE60N160B N-Channel Enhancement Mode MOSFET .

ICE60N160B Features

* Low rDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
* Increased transconductance performance
* Optimized design for high performance power systems Pr

ICE60N160B Applications

* in process in the USA and the above listed countries. SP-60N160B-000-2a 06/05/2013 Free Datasheet http://www. datasheet4u. com/ 8 Preliminary Data Sheet ICE60N160B Marking Information YY = Last two digits of the year YYWW
* XXXX00 ICE60N160 WW = Work week calendar on Icemos subcon assembl

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ICE60N160B Datasheet Preview — Preview of ICE60N160B PDF

Datasheet Details

Part number: ICE60N160B
Manufacturer: Icemos
File Size: 638.69 KB
Datasheet: ICE60N160B_Icemos.pdf
Description: N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET Icemos

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ICE60N160B Stock/Price