ICE60N800D - N-Channel Enhancement Mode MOSFET

Icemos

ICE60N800D Description

Preliminary Data Sheet ICE60N800D ICE60N800D N-Channel Enhancement Mode MOSFET .

ICE60N800D Features

* Low rDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
* Increased transconductance performance
* Optimized design for high performance power systems HA

ICE60N800D Applications

* in process in the USA and the above listed countries. SP-60N800D-000-0b 05/24/2013 Free Datasheet http://www. datasheet4u. com/ 8 Preliminary Data Sheet ICE60N800D Marking Information YY = Last two digits of the year YYWW
* XXXX00 ICE60N800 WW = Work week calendar on Icemos subcon assembl

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ICE60N800D Datasheet Preview — Preview of ICE60N800D PDF

Datasheet Details

Part number: ICE60N800D
Manufacturer: Icemos
File Size: 835.71 KB
Datasheet: ICE60N800D_Icemos.pdf
Description: N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET Icemos

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ICE60N800D Stock/Price