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2SC5803 Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5803 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Wide Area of Safe Operation. 100% avalanche tested. Minimum Lo.

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Applications

* Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuo

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