* Package Dimensions unit : mm 2045B [2SC5808] 6.5 5.0 4 High breakdown voltage. High speed switching. Wide ASO. Adoption of MBIT process. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collecto
2SC5808
Sanyo Semicon Device
66.08 KB
Npn triple diffused planar silicon transistor.
www.DataSheet4U.com Ordering number : ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor 2SC5808 Switching Power Supply Applications Feat.
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