2SC5810 NPN Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5810 Unit.

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Datasheet Specifications

Part number: 2SC5810
Manufacturer: Toshiba ↗ Semiconductor
File Size: 156.02 KB
Datasheet: 2SC5810_ToshibaSemiconductor.pdf
Description: NPN Transistor

Applications

* DC-DC Converter Applications Strobe Applications 2SC5810 Unit: mm
* High DC current gain: hFE = 400 to 1000 (IC = 0.1 A)
* Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)
* High-speed switching: tf = 85 ns (typ. ) Absolute Maximum Ratings (Ta = 25°C) Cha

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2SC5810 NPN Transistor Toshiba Semiconductor

Toshiba Semiconductor 2SC5810-like datasheet