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2SC5810 Datasheet - Toshiba Semiconductor

2SC5810 NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5810 Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) High-speed switching: tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Col.

2SC5810 Datasheet (156.02 KB)

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Datasheet Details

Part number:

2SC5810

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

156.02 KB

Description:

Npn transistor.

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2SC5810 NPN Transistor Toshiba Semiconductor

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