2SC5819
Toshiba ↗ Semiconductor
141.66kb
Npn transistor.
TAGS
📁 Related Datasheet
2SC5810 - NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5810
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5810
Unit.
2SC5811 - NPN TRANSISTOR
(Sanyo Semicon Device)
2SC5811
No.
2SC5811
µ
16.0
5.0
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
3.5
5.45
0.8
2.1
2SC5811
∞ µ µ
PW=20µs .
2SC5812 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SC5812
Silicon NPN Epitaxial VHF/UHF wide band amplifier
ADE-208-1468(Z) Rev.0 Nov. 2001 Features
• High power gain, Low noise figure at low power o.
2SC5813 - Silicon NPN Transistor
(Panasonic)
Transistors
2SC5813
Silicon NPN epitaxial planar type
For DC-DC converter
Unit: mm
■ Features
• Low collector-emitter saturation voltage VCE(sat) •.
2SC5800 - NPN SILICON RF TRANSISTOR
(Renesas)
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5800
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FE.
2SC5801 - NPN TRANSISTOR
(NEC)
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5801
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
FEATURES
• Low phase di.
2SC5802 - Silicon NPN Power Transistors
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Wide area .
2SC5802 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5802
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Wide.
2SC5803 - Silicon NPN Power Transistor
(Inchange Semiconductor Company)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5803
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Wide.
2SC5804 - SMALL-SIGNAL TRANSISTOR
(Isahaya Electronics Corporation)
..
〈SMALL-SIGNAL TRANSISTOR〉
2SC5804
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION
2SC5804 is a supe.
