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2SC5819 Datasheet - Toshiba Semiconductor

2SC5819 NPN Transistor

2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter .

2SC5819 Datasheet (141.66 KB)

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Datasheet Details

Part number:

2SC5819

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

141.66 KB

Description:

Npn transistor.

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2SC5819 NPN Transistor Toshiba Semiconductor

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