Datasheet4U Logo Datasheet4U.com

2SC5886 Datasheet - Toshiba Semiconductor

2SC5886 NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications 2SC5886 Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Bas.

2SC5886_ToshibaSemiconductor.pdf

Preview of 2SC5886 PDF
2SC5886 Datasheet Preview Page 2 2SC5886 Datasheet Preview Page 3

Datasheet Details

Part number:

2SC5886

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

171.42 KB

Description:

Npn transistor.

📁 Related Datasheet

2SC5880 Power transistor (Rohm)

2SC5881 Power transistor (Rohm)

2SC5882 SILICON NPN EPITAXIAL TRANSISTOR (ETC)

2SC5883 SMALL-SIGNAL TRANSISTOR (ISAHAYA)

2SC5884 NPN Transistor (Panasonic Semiconductor)

2SC5885 NPN Transistor (Panasonic Semiconductor)

2SC5885 Silicon NPN transistor (BLUE ROCKET ELECTRONICS)

2SC5885 Silicon NPN Power Transistor (Inchange Semiconductor Company Limited)

TAGS

2SC5886 2SC5886 NPN Transistor Toshiba Semiconductor

2SC5886 Distributor