Datasheet4U Logo Datasheet4U.com

2SC5886 Datasheet - Toshiba Semiconductor

Datasheet Details

Part number:

2SC5886

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

171.42 KB

Description:

NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications 2SC5886 Unit: mm * High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) * Low collector-emitter saturation: VCE (sat) = 0.22 V (max) * High-speed switching: t

2SC5886_ToshibaSemiconductor.pdf

Preview of 2SC5886 PDF
2SC5886 Datasheet Preview Page 2 2SC5886 Datasheet Preview Page 3

2SC5886, NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications 2SC5886 Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Bas

2SC5886 Distributor

📁 Related Datasheet

📌 All Tags

Toshiba Semiconductor 2SC5886-like datasheet