2N3667 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. Low Collector-Emitter Saturation Voltage. 100% avalanche tested. Minimum Lot-to-Lot variations for rob.

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Datasheet Specifications

Part number: 2N3667
Manufacturer: Inchange Semiconductor
File Size: 181.70 KB
Datasheet: 2N3667-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A P

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2N3667 Silicon NPN Power Transistor Inchange Semiconductor

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