Part number:
2N6580
Manufacturer:
Inchange Semiconductor
File Size:
136.48 KB
Description:
Silicon npn power transistor.
2N6580
Inchange Semiconductor
136.48 KB
Silicon npn power transistor.
📁 Related Datasheet
2N6581 - Bipolar NPN Device
(Seme LAB)
2N6581
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N6581 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6581
DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,Hi.
2N6582 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min) ·High Curr.
2N6583 - Bipolar NPN Device
(Seme LAB)
2N6583
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N6583 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min) ·High Curr.
2N6584 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min) ·High Curr.
2N6588 - NPN Transistor
(SSDI)
10 AMP NPN(continued)
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
.
2N6589 - NPN Transistor
(SSDI)
10 AMP NPN(continued)
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
.
